t4 - lds -0 325 , rev . 1 (12/10/13 ) ?201 3 microsemi corporation page 1 of 4 one enterprise, aliso viejo, ca 92656 ph: 949 - 380 - 6100 sales.support@microsemi.com 2n 1479 C 2n 1482 available on commercial versions npn s ilicon power t ransistor qualified per mil -s- 19500/ 207 qualified levels : jan description this family of 2n1479 through 2n1482 medium - power , planar transistors a re military qualified to the jan level for high - reliability applications . to -5 package important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n 1479 through 2n 1482 series ? jan qualification are available per mil -s- 19500/207 . (see part nomenclature for all available options.) ? rohs compliant versions available (commercial grade only) ap plications / benefits ? general purpose transistors for low power applications requiring high frequency switching ? l ow package profile ? military and other high - reliability applications m axim um ratings @ t a = +25 oc unless otherwise noted msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters / test conditions symbol 2n1479 2n1481 2n1480 2 n1482 unit collector - emitter voltage v ceo 40 55 v collector - base voltage v cbo 60 10 0 v emitter - base voltage v ebo 12 v base current i b 1.0 a collector current i c 1.5 a operating & storage junction temperature range t j , t stg - 65 to +200 c thermal resistance junction - to - case r ? jc 35 o c/w total power dissipation @ t a = +25 c (1) p t 1.0 w notes : 1. for 1000 hours expected life at t a = +25 oc downloaded from: http:///
t4 - lds -0 325 , rev . 1 (12/10/13 ) ?201 3 microsemi corporation page 2 of 4 one enterprise, aliso viejo, ca 92656 ph: 949 - 380 - 6100 sales.support@microsemi.com 2n 1479 C 2n 1482 mechanical and packaging ? case: hermetically sealed steel base, n ickel cap ? terminals: leads are gold plated k ov a r (s older dip (sn63/pb37) is available upon special request . note: solder dipping will eliminate rohs complian ce .) ? marking: part number, d ate c ode, m anufacturers id ? polarity: npn ? w eight: approximately 1. 1 4 grams ? see p ackage d im ensions on last page. part nomenclature jan 2n1479 (e3) reliability level jan = jan level blank = commercial jedec type number (see electrical characteristics table) rohs compliance e3 = rohs comp liant ( available on commercial grade only ) blank = non - rohs compliant symbols & definitions symbol definition h fe common - emitter static forward current transfer ratio: the ratio of the dc output current to the dc input c urrent with the output voltage held constant. i b base current: the value of the dc current into the base terminal. i c collector current: the value of the dc current into the collector terminal. i e emitter current: the value of the dc current into the emitter terminal. t c c ase temperature: the temperature measured at a specified location on the case of a device. v (br)ceo collector - emitter breakdown voltage, base open. the breakdown voltage between the collector and emitter terminals when the collector terminal is biased in the reverse direction with respect to the emitter terminal, and the base terminal is open circuited. the collector terminal is considered to be biased in the reverse direction when i t is made positive for npn transistors, or negative for pnp transistors, with respect to the emitter terminal. v cb collector - base voltage: the dc voltage between the collector and the base. v cbo collector - base voltage, emitter open: the voltage between the collector and base terminals when the emitter terminal is open - circ uited. v cc collector - supply voltage: the supply voltage applied to a circuit connected to the collector. v ce collector - emitter voltage: the dc voltage between the collector and the emitter. v ce(sat) collector - emitter saturation voltage: the voltage between the collector and emitter terminals under conditions of base current or base - emitter voltage beyond which the collector current remains essentially constant as the base c urrent or voltage is increased. v ceo collector - emitter voltage, base open: the voltage between the collector and the emitter terminals when the base terminal is open - circuited. v eb emitter - base voltage: the dc voltage between the emitter and the base v ebo emitter - base voltage, collector open: the voltage between the emitter and base terminals with the collector terminal open - circuited. downloaded from: http:///
t4 - lds -0 325 , rev . 1 (12/10/13 ) ?201 3 microsemi corporation page 3 of 4 one enterprise, aliso viejo, ca 92656 ph: 949 - 380 - 6100 sales.support@microsemi.com 2n 1479 C 2n 1482 electrical characteristics @ t a = +25 c, unless otherwise noted off character is tics parameters / test conditions symbol min. max. unit collector - emitter breakdown voltage v (br)ceo 40 55 v i c = 50 ma, 2n1479, 2n1481 2n1480, 2n1482 collector - emitter breakdown voltage v (br)cex 60 100 v v eb = 1.5 v, i c = 0.25 ma v eb = 1.5 v, i c = 0.25 ma 2n1479, 2n1481 2n1480, 2n1482 collector - base cutoff current i cbo1 5.0 a v cb = 30 v v cb = 50 v 2n1479, 2n1481 2n1480, 2n1482 emitter - base cutoff current v eb = 12 v i ebo 10 a on characteristics parameters / test conditions symbol min. max. unit forward - current transfer ratio i c = 200 ma, v ce = 4.0 v 2n1479, 2n148 0 2n148 1 , 2n1482 h fe 20 35 60 100 collector - emitter saturation voltage i c = 200 ma, i b = 20 ma i c = 200 ma, i b = 10 ma 2n1479, 2n148 0 2n148 1 , 2n1482 v ce(sat) 0.75 0.75 v base - emitter voltage non - saturation i c = 200 ma, v ce = 4.0 v v be 1.5 v dynam ic char acteristics parameters / test conditions symbol min. max. unit forward current cutoff frequency i c = 5.0 ma, v cb = 28 v f ab 800 khz switching characteristics parameters / test conditions symbol min. max. unit turn - on / turn - off time v cc = 12 v, r c = 59 ? , i b0 = i b2 = 8.5 ma; i b1 = 20 ma t on + t off 25 s downloaded from: http:///
t4 - lds -0 325 , rev . 1 (12/10/13 ) ?201 3 microsemi corporation page 4 of 4 one enterprise, aliso viejo, ca 92656 ph: 949 - 380 - 6100 sales.support@microsemi.com 2n 1479 C 2n 1482 package dimensions notes: 1. dimension s are in inches. millimeters are given for i nformation only. 2. measure in the zone beyond 0.250 (6.35 mm) from the seating plane. 3. measure in the zone 0.050 (1.27 mm) and 0.250 (6.35 mm) from the seating plane. 4. v ariations on dim b in this zone shall not exceed 0.010 (0.25 mm) . 5. outline in this zone is not controlled . 6. when measured in a gauging plane 0.054 + 0.001 (1.37 mm + 0.03 mm) below the seating plane of the transistor max dia leads shall be within 0.007 (0.18mm) of their true location relative to a maximum wi dth tab. smaller dia leads shall fall within the outline of the max dia lead tolerance. 7. collector internally connected to case . 8. measure d from the maximum diameter of the actual device . 9. all 3 leads . 10. leads at gauge plane 0 .054 inch (1.37 mm) + 0 .001 inch (0.03 mm) -0 .000 inch (0.00 mm) below seating plane shall be within 0 .007 inch (0.18 mm) radius of true position (tp) relative to tab. device may be measured by direc t methods or by gauge. dimensions symbol inch millimeters note min max min max cd 0.305 0.335 7.75 8.51 ch 0.240 0.260 6.10 6.60 hd 0.335 0.370 8.51 9.40 lc 0.200 tp 5.08 tp 10 ld 0.016 0.021 0.41 0.53 2, 9 ll 1.5 1.75 3.81 4.45 9 lu 0.016 0.019 0.41 0.48 3, 9 l1 - 0.050 - 1.27 13 l2 0.250 - 6.35 - 13 p 0.100 - 2.54 - 4 q - - - - 5 tl 0.029 0.045 0.74 1.14 8 tw 0.028 0.034 0.71 0.86 r - 0.0 07 - 0.18 radius 45 tp 45 tp 6 downloaded from: http:///
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